A method for qualitatively determining the depth position of a single atom in a nanometer scale field effect device structure

Authors

  • Mohammed A. H. Khalafalla Department of Physics, Faculty of Science, University of Khartoum

DOI:

https://doi.org/10.53332/sjs.v5i1.480

Keywords:

qualitatively determining, single atom

Abstract

This work reports on a method for detecting the vertical depth position of single atom in a nanometer scale semiconductor
field effect device at cryogenic temperature. The depth position is qualitatively obtained from the analysis of the acceptorto-gate capacitances.

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Published

2021-10-12

Issue

Vol. 5 No. 1 (2012): Sudan Journal of Science

Section

Articles