A method for qualitatively determining the depth position of a single atom in a nanometer scale field effect device structure
DOI:
https://doi.org/10.53332/sjs.v5i1.480الكلمات المفتاحية:
qualitatively determining، single atomالملخص
This work reports on a method for detecting the vertical depth position of single atom in a nanometer scale semiconductor
field effect device at cryogenic temperature. The depth position is qualitatively obtained from the analysis of the acceptorto-gate capacitances.
التنزيلات
منشور
2021-10-12
إصدار
القسم
Articles
